Title:
PHOTOCHEMICAL VAPOR DEPOSITION EQUIPMENT
Document Type and Number:
Japanese Patent JPS61212015
Kind Code:
A
Abstract:
PURPOSE:To reduce or completely prevent the formation of a film on the light transmitting window of the titled equipment by a method wherein non-deposition type raw gas only is introduced into the first chamber on which the light transmitting window is provided, and the pressure in the first chamber is made higher than that of the second chamber in which deposition type raw gas is introduced. CONSTITUTION:A reaction chamber 5 is divided into the first chamber 3 and the second chamber 7 by a partition plate 12 whereon a reaction chamber isolating pipe 6 which is used as a gas interconnecting hole is provided. The gas to be decomposed, which is formed by dissolution by the irradiation of a high energy beam of light 1, or the non-deposition gas which is not dissolved is used as the raw gas to be introduced into the first chamber. The gas to be decomposed, which is formed by dissolution by the irradiation of a high energy beam of light 1, or the depositable raw gas having film-forming faculty is introduced into the second chamber. A deposited film 9 is formed on a substrate 10 by projecting the high energy beam of light 1 into the reaction chamber 5 having the first chamber of pressure P1 of the raw gas and the second chamber of the pressure P2 of the raw gas in the relation of P1-P2>0 through the intermediary of a light transmitting window 2.
Inventors:
YAMAGAMI ATSUSHI
SANO MASAFUMI
SANO MASAFUMI
Application Number:
JP5244485A
Publication Date:
September 20, 1986
Filing Date:
March 18, 1985
Export Citation:
Assignee:
CANON KK
International Classes:
C23C16/48; H01L21/205; H01L31/04; (IPC1-7): C23C16/48; H01L31/04
Attorney, Agent or Firm:
Wakabayashi Tadashi
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