光電変換素子、撮像素子、光センサ、光電変換素子用材料、化合物

Title:

光電変換素子、撮像素子、光センサ、光電変換素子用材料、化合物

Document Type and Number:

Japanese Patent JP7215970

Kind Code:

B2

Abstract:

To provide a photoelectric conversion element that exhibits stable performance even when the composition ratio of a photoelectric conversion film fluctuates in a case in which the photoelectric conversion film in the photoelectric conversion element is vapor-deposited, and an imaging element, an optical sensor, a material for a photoelectric conversion element, and a compound.SOLUTION: A photoelectric conversion element includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, and the photoelectric conversion film includes a compound represented by the formula (1) and an n-type semiconductor material.SELECTED DRAWING: None

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Inventors:

Naoyuki Hanaki
Tomoaki Yoshioka

Application Number:

JP2019121697A

Publication Date:

January 31, 2023

Filing Date:

June 28, 2019

Export Citation:

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Assignee:

FUJIFILM Corporation

International Classes:

H10K30/60; H01L27/146

Domestic Patent References:

JP2017529440A
JP2013254912A
JP2014209530A
JP2012015434A

Foreign References:

US3050389
WO2017210072A1
WO2018207420A1

Attorney, Agent or Firm:

Hideaki Ito
Fumio Mihashi

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