Title:
PHOTOELECTRON FIELD-EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP3109934
Kind Code:
B2
Abstract:
PURPOSE: To obtain amplification function and optical modulation function in microwaves, by constituting a semiconductor clad layer having a refractive index smaller than that of an active layer formed between a semiconductor substrate and an active layer.
CONSTITUTION: On a GaAs semiconductor substrate 11, an undoped GaAs layer 12 is formed as a buffer layer, on which a clad layer 13 is formed. N-type GaAs layers 14, 15 turning to active layers are formed on the clad layer 13, which has a refractive index smaller than that of the N-type GaAs layers 14, 15. On the GaAs layer 15, a clad layer 16 is formed, on which a gate electrode 18 is formed. A source electrode 17 and a drain electrode 17 are formed on both sides of the gate electrode 18. An optical waveguide 19 is formed in the N-type GaAs layers 14, 15 under the gate electrode 18. Thereby a current flowing between the source electrode 17 and the drain electrode 17 and the electric field in the optical waveguide 19 can be modulated.
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Inventors:
Joan, Stellato
Application Number:
JP1572093A
Publication Date:
November 20, 2000
Filing Date:
February 02, 1993
Export Citation:
Assignee:
Sharp Corporation
International Classes:
G02F1/015; G02F1/025; H01L21/338; H01L27/15; H01L29/778; H01L29/80; H01L29/812; (IPC1-7): H01L27/15; G02F1/015; G02F1/025; H01L21/338; H01L29/80; H01L29/812
Domestic Patent References:
| JP2244116A |
Other References:
Ａ．Ｋａｓｔａｌｓｋｙ，Ｊ．Ｈ．Ａｂｅｌｅｓ，ａｎｄ Ｒ．Ｆ．Ｌｅｈｅｎｙ，”Ｎｏｖｅｌ ｏｐｔｏｅｌｅｃｔｒｏｎｉｃ ｓｉｎｇｌｅ ｑｕａｎｔｕｍ ｗｅｌｌ ｄｅｖｉｃｅｓ ｂａｓｅｄ ｏｎ ｅｌｅｃｔｒｏｎ ｂｌｅａｃｈｉｎｇ ｏｆ ｅｘｃｉｔｏｎ ａｂｓｏｒｐｔｉｏｎ”，Ａｐｐｌｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ，１９８７年３月２３日，Ｖｏｌ．５０，ｎｏ．１２，ｐｐ．７０８−７１０
Attorney, Agent or Firm:
Shusaku Yamamoto