Title:
PHOTOSENSITIVE COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND RESIST UNDERLAYER FILM
Document Type and Number:
Japanese Patent JP2017037326
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a photosensitive composition for forming a resist underlayer film which is excellent in dry etching resistance and heat resistance and whose alkali solubility is easy to control, and to provide a resist underlayer film.SOLUTION: The photosensitive composition for forming a resist underlayer film contains a novolac type phenol resin obtained by reacting one or more phenolic trinuclear compounds (A) selected from the group consisting of compounds represented by general formula (1) and compounds represented by general formula (2) with aldehydes (B) in the presence of an acid catalyst. [In the formulae, R, Rand Reach independently represent an optionally substituted 1-8C alkyl group, and Rrepresents a hydrogen atom, an optionally substituted alkyl group, or an optionally substituted aryl group.]SELECTED DRAWING: None
Inventors:
IMADA TOMOYUKI
Application Number:
JP2016196420A
Publication Date:
February 16, 2017
Filing Date:
October 04, 2016
Export Citation:
Assignee:
DAINIPPON INK & CHEMICALS
International Classes:
G03F7/11; C08G8/20
Attorney, Agent or Firm:
Kono Tsuyo
Previous Patent: 照明装置
Next Patent: METHOD FOR MANUFACTURING BASE MATERIAL FOR ELECTROPHOTOGRAPHIC PHOTORECEPTOR, METHOD FOR MANUFACTURI...
Next Patent: METHOD FOR MANUFACTURING BASE MATERIAL FOR ELECTROPHOTOGRAPHIC PHOTORECEPTOR, METHOD FOR MANUFACTURI...