Title:
POLISHING COMPOSITION AND POLISHING METHOD
Document Type and Number:
Japanese Patent JP2015113357
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To polish and flatten silicon nitride or silicon oxynitride in a semiconductor device manufacturing process at a high polishing speed and at an appropriate polishing speed ratio.SOLUTION: Provided is a polishing composition containing cerium oxide particles and at least one kind of nitride polishing accelerator selected from the group consisting of methonium compounds and alkanolamine compounds, where the alkanolamine compounds include primary or secondary alkanolamines; the cerium oxide particles have an average secondary particle diameter of 50 nm or more and 160 nm or less; the concentration of the methonium compound is 0.025 mass% or more and 1.0 mass% or less; and the pH of the polishing composition is 3.5 or more and less than 6. Also provided is a polishing method using the same.
Inventors:
YOSHIDA IORI
Application Number:
JP2013254341A
Publication Date:
June 22, 2015
Filing Date:
December 09, 2013
Export Citation:
Assignee:
ASAHI GLASS CO LTD
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Attorney, Agent or Firm:
Patent Business Corporation Sakura International Patent Office