Title:
POLISHING COMPOSITION, POLISHING METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2023042685
Kind Code:
A
Abstract:
To provide means capable of polishing a carbon film at a high polishing speed.SOLUTION: A polishing composition contains abrasive grains, a pH adjuster, and water. The average secondary particle diameter of the abrasive grains exceeds 120 nm. The abrasive grains include cationic modified silica, and the pH is 7 or less.SELECTED DRAWING: None
Inventors:
MAE RYOTA
Application Number:
JP2021149944A
Publication Date:
March 28, 2023
Filing Date:
September 15, 2021
Export Citation:
Assignee:
FUJIMI INC
International Classes:
B24B37/00; H01L21/304; C01B33/149; C09G1/02; C09K3/14
Attorney, Agent or Firm:
IBC Ichibancho Patent Attorney Corporation