Title:
POLYMER FOR RESIST, RESIST COMPOSITION, PATTERN FORMING METHOD AND STARTING COMPOUND FOR RESIST POLYMER
Document Type and Number:
Japanese Patent JP2007327062
Kind Code:
A
Abstract:
To provide a polymer for resist generating little line edge roughness and forming little defect in DUV excimer laser lithography, etc.
The acrylic polymer for resist contains an acid-decomposable unit having a structure expressed by formula (3) and a unit having a hydrophilic group as constitution units. In the formula (3), K1and K2are each independently one or more groups selected from alkylene, cycloalkylene, oxyalkylene and arylene; L1and L2are each independently one or more groups selected from -C(O)- and -OC(O)-; M2groups are one or more groups selected from alkylene, cycloalkylene and oxyalkylene; and Y1and Y2are each independently an acid-decomposable bond containing a group having specific ether structure or a group having a specific cyclic ether.
COPYRIGHT: (C)2008,JPO&INPIT
Inventors:
MOMOSE AKIRA
OTAKE ATSUSHI
NAKAMURA MASA
UEDA TERUSHI
Application Number:
JP2007160177A
Publication Date:
December 20, 2007
Filing Date:
June 18, 2007
Assignee:
MITSUBISHI RAYON CO
International Classes:
C08F220/10; G03F7/039; H01L21/027
Domestic Patent References:
| JP2000199951A | 2000-07-18 | | | |
| JP2002062656A | 2002-02-28 | | | |
| JP4568278B2 | 2010-10-27 | | | |
Attorney, Agent or Firm:
Akio Miyazaki
Ishibashi Masayuki
Masaaki Ogata
