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Patent Searching and Data


Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2005276968
Kind Code:
A
Abstract:

To provide a power semiconductor device, capable of reducing the thermal influence on an external circuit apparatus by suppressing the temperature rise of the main wiring electrode, even if it is subjected to high-temperature operation of a semiconductor chip.

A heat radiation board 8 is constituted by separating a heat radiator 8a, to which a semiconductor chip 1 is joined from a heat radiator 8b to which the main wiring electrodes 3, 4 are jointed. The heat radiator 8a and the heat radiator 8b are jointed so that the mutual sides is disposed opposite to each other via heat-resistant resin 9. The temperature rise of the main wiring electrodes 3, 4 can be suppressed, since the heat generated from the semiconductor chip 1 can be prevented from transmitting from the heat radiator 8a to the heat radiator 8b.


Inventors:
OI TAKESHI
Application Number:
JP2004086035A
Publication Date:
October 06, 2005
Filing Date:
March 24, 2004
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L23/36; H01L29/78; (IPC1-7): H01L23/36; H01L29/78
Attorney, Agent or Firm:
Shigeaki Yoshida
Yoshitake Hidetoshi
Takahiro Arita