Title:
AVALANCHE PHOTODIODE
Document Type and Number:
Japanese Patent JP2005276969
Kind Code:
A
Abstract:
To accelerate an avalanche photodiode by increasing MB product without further lamination of a multiplication layer, with respect to the avalanche photodiode.
On an n-type semiconductor layer 1, at least a light absorption layer 2, an electric field drop layer 4, a multiplication layer 6, and a p-type semiconductor layer 7 are laminated one by one. Between the electric field drop layer 4 and the multiplication layer 6, a hole ionization rate reinforcement layer 5 is formed, where the energy seen from the hole 8 of a valence band is higher than the energy seen from the hole 8 of the valence band of the multiplication layer 6.
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Inventors:
YASUOKA NAMI
Application Number:
JP2004086052A
Publication Date:
October 06, 2005
Filing Date:
March 24, 2004
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L31/107; (IPC1-7): H01L31/107
Attorney, Agent or Firm:
Manabe Kiyoshi
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito
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