PRODUCTION OF CARBON NITRIDE AND CARBON NITRIDE OBTAINED BY SAME METHOD

Japanese Patent JPH1018040

A

To improve characteristics of carbon nitride formed on a substrate by irradiating the growing surface of the carbon nitride on the substrate with light including a specified wavelength region.

Carbon nitride is produced in the following process. The source material is supplied from a supply port 3 into a main film forming chamber 1, while laser light is introduced through a window 5. The chamber is equipped with a high frequency power supply 9 and a matching box to be connected to the substrate. The substrate 11 is mounted at a specified angle to the laser light introduced through the window 5, in such a manner that while the thin film is formed on the substrate 11 by CVD method or PVD method, the film forming surface is irradiated with the laser light. By irradiating the growing surface of carbon nitride formed on the substrate 11 with light in 100 to 300nm wavelength range, carbon nitride having almost ideal compsn. can be obtd.

JPH10310473	PRODUCTION OF TRANSITION METALLIC CARBIDE AND/OR TRANSITION METALLIC CARBONITRIDE, THEIR USE AND NEW TRANSITION METALLIC XEROGEL
JP6354326	Manufacturing method of Sialon powder
WO/2008/081625	SILICON ALLOY AND ITS POWDER, PRODUCTION APPARATUS, PRODUCTION PROCESS, AND SINTER

NISHINO HITOSHI
TADA SHINICHI
MORIKAWA SHIGERU
INOUE NAOKI
FUJII TAKAMITSU

JP16951696A

January 20, 1998

June 28, 1996

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OSAKA GAS CO LTD

C01B21/082; C23C14/22; C23C16/34; C23C16/48; H01L21/205; H01L21/318; (IPC1-7): C23C16/34; C01B21/082; C23C14/22; C23C16/48; H01L21/205; H01L21/318

Kitamura Osamu

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