Title:
PRODUCTION OF COMPOUND SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPH01282196
Kind Code:
A
Abstract:
PURPOSE:To stably and easily improve quality, performance and yield of the title wafer by bringing the wafer, which has been obtained by growing a specified epitaxial layer on a GaAs base plate, into contact with a soln. for dissolving the base plates dissolving and removing the GaAs base plate. CONSTITUTION:A wafer is obtained by growing a Ga.Al.As epitaxial layer 2 having >=0.4 Al mixed crystal ratio and >=100mum thickness on a GaAs base plate 1 having about 40X40mm size and about 250mum thickness in a liquid phase at about 950 deg.C growth starting temp. Then this wafer is cooled at room temp. and taken out and the base plate 1 is set in the recessing part of a base plate holder 4 while keeping the base plate 1 to the upper side and thereafter introduced into a quartz reaction pipe and heated at 800-1000 deg.C in the gaseous H2 atmosphere and then a soln. holder 5 is moved to bring the base plate 1 into contact with a soln. 3 for dissolution and the base plate 1 is completely dissolved. Then the holder 5 is again moved to separate the soln. 3 from the epitaxial layer 2. Then a compound semiconductor wafer is produced by cooling the wafer.
Inventors:
KIKUCHI YUKIO
TOYOSHIMA TOSHIYA
OOKAWA YOSHINORI
TOYOSHIMA TOSHIYA
OOKAWA YOSHINORI
Application Number:
JP11075188A
Publication Date:
November 14, 1989
Filing Date:
May 07, 1988
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
C30B19/00; C30B29/40; H01L21/208; (IPC1-7): C30B19/00; C30B29/40; H01L21/208
Attorney, Agent or Firm:
Toshiyuki Usuda