PURPOSE: To convert a recording layer totally into Fe8N and to improve the electromagnetic conversion characteristics by implanting a prescribed amount of nitrogen ion into an iron thin film to obtain a single phase thin film of Fe8N after forming the iron thin film on a nonmagnetic substrate.
CONSTITUTION: The thickness of an iron thin film is set at ≤2,000 and preferably at ≤1,000, and a prescribed amount of nitrogen ion is implanted into said iron thin film layer. In this case, the desired nitrogen ion quantity Q to be injected for production of an Fe8N film is obtained as 1.06×1022×T(inos/cm2) where T(cm) shows the thickness of the iron thin film. The various conditions of an ion implanting device are set properly in response to said desired quantity of the nitrogen ion. These conditions are decided so as to make the ion implanting time as short as possible. In addition the even implanting depth is desired within a nitrogen ion film. A heating process is also applied at a low temperature of ≤300°C in order to correct the disturbance of crystal grids of the ion thin film.
NAKAYAMA KOUICHI
UEHARA KENICHI
KANOU AKIRA
SHIMIZU TATSUJI
| JPS57167132A | 1982-10-14 | |||
| JP54023506B | ||||
| JP57092434B |
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