Title:
PRODUCTION METHOD OF POLYMER FOR SEMICONDUCTOR LITHOGRAPHY, PRODUCTION METHOD OF RESIST COMPOSITION, AND PRODUCTION METHOD OF SUBSTRATE
Document Type and Number:
Japanese Patent JP2015143363
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a production method of a polymer for semiconductor lithography, by which variations in polymers among production lots can be decreased.SOLUTION: The production method of a polymer for semiconductor lithography comprises dropping a monomer and a polymerization initiator from a reservoir into a polymerization reaction vessel and radically polymerizing the monomer in the presence of a polymerization solvent in the polymerization reaction vessel. The method includes the following gas purge step after preliminarily charging the polymerization reaction vessel with at least a part of the polymerization solvent and/or a part of the monomer and before starting the polymerization reaction. In the gas purge step, the polymerization reaction vessel is evacuated down to 20 kPa or less while the gas in the reservoir is not replaced by inert gas, and then the gas in the polymerization reaction vessel is replaced by inert gas.
Inventors:
YASUDA ATSUSHI
OSHIKIRI TOMOYA
OSHIKIRI TOMOYA
Application Number:
JP2015037205A
Publication Date:
August 06, 2015
Filing Date:
February 26, 2015
Export Citation:
Assignee:
MITSUBISHI RAYON CO
International Classes:
C08F2/00; C08F2/06; G03F7/039; G03F7/20
Domestic Patent References:
| JP2008260931A | 2008-10-30 | |||
| JP2003221403A | 2003-08-05 | |||
| JP2002201223A | 2002-07-19 | |||
| JPH1149806A | 1999-02-23 | |||
| JP5741814B2 | 2015-07-01 |
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Suzuki Mitsuyoshi
Tadashi Takahashi
Suzuki Mitsuyoshi
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