To provide a production method of a relief pattern, by which a fine pattern having low line edge roughness can be formed with high resolution while suppressing pattern collapse.
The production method of a relief pattern comprises steps of: (i) applying the following negative resist composition on a substrate and heating it to form a pre-exposure resist film; (ii) exposing the pre-exposure resist film to an electron beam, an ion beam, EUV rays or X-rays for along a pattern to form a post-exposure resist film; and (iii) developing the post-exposure resist film by using an organic solvent. The organic solvent used shows a dissolution rate of 0.5 nm/sec or more at 23°C on the pre-exposure resist film and comprises an alcohol solvent having no hetero atom except for a hydroxyl group. The negative resist composition contains a phenolic compound (A), which has two or more phenolic hydroxyl groups in a single molecule and one or more substituents in a single molecule, the substituent selected from the group consisting of a hydroxymethyl group and an alkoxymethyl group and present at an ortho position of the phenolic hydroxyl group, and which has a molecular weight of 400 to 2500, by 70 wt.% or more in the entire solid content of the negative resist composition.
ISHIKAWA MIKIO
FUKUDA MASAHARU
Akihiko Yamashita