PRODUCTION OF OXIDE SINGLE CRYSTAL

Japanese Patent JP2507910

B2

PURPOSE: To improve the quality by growing an oxide single crystal by melting and solidifying method while impressing magnetic field to an oxide molten liquid and generating spiral convection excellent in central symmetry in the molten liquid.
CONSTITUTION: A sintered compact is formed by CIP molding the oxide of TiO2 or the like and firing at a prescribed temp. Next, a raw material oxide is filled in a crucible made of platinum or the like and is melted by high frequency induction heating. Then the spiral convection excellent in central symmetry is generated in the molten liquid by impressing magnetic field of 0.1-10 stera to the oxide molten liquid. The high quality oxide single crystal large in diameter, lengthy and large sized and excellent in composition uniformity is obtained through Czochralski method by growing the crystal by dipping a seed crystal into the molten liquid and withdrawing the crystal while adjusting revolution speed and revolution direction.

JPH0412081	PRODUCTION OF SINGLE CRYSTAL OF COMPOUND OF GROUP III-V
WO/2010/112259	POT FOR SILICON SUITABLE FOR PRODUCING SEMICONDUCTORS

MYAZAWA YASUTO
KIMURA SHIGEYUKI
MORITA SHOJI
SEKIWA HIDEYUKI

JP8810693A

June 19, 1996

March 23, 1993

Click for automatic bibliography generation  

KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO

C30B11/00; C30B13/30; C30B15/22; C30B29/16; C30B30/04; H01L21/208; (IPC1-7): C30B15/22; C30B11/00; C30B13/30; C30B29/16; C30B30/04; H01L21/208

JP5841795A
JP3141187A
JP6479099A
JP63215587A
JP6036392A

Previous Patent: 屋根板支持枠

Next Patent: OPTICAL WAVEGUIDE TYPE SYNAPSE LOAD MODULATOR FORMED BY USING NEMATIC LIQUID CRYSTAL CLAD