Title:
PRODUCTION OF RELIEF STRUCTURE ON SEMICONDUCTOR MATERIAL SUPPORT
Document Type and Number:
Japanese Patent JP3735880
Kind Code:
B2
Abstract:
PURPOSE: To provide a process for producing a microrelief structure to the extent of the wavelength of light, such as a binary optical element, on a semiconductor substrate.
CONSTITUTION: A wafer 1 having a planar face which is nearly parallel with a main crystal plane in the case the semiconductor substrate is a single crystal and a slightly inclined with the crystal plane of the same index in the entire crystal grains in the case the substrate is polycrystals is subjected to the implantation of ions of hydrogen or rare gas, by which a gaseous microbubble region is formed in the specified position within the wafer and a desired shape is regulated. The temp. of the wafer 1 during the ion implantation is maintained at such a low temp. at which the gas evolved by the implantation does not escape outside the semiconductor by diffusion. The bubble region is generated at the depth meeting the implantation energy of the ions. A thin film-like relief structure is formed on the front surface side of the wafer with the bubble region as a boundary and an inverted relief structure on the base side. A reinforcing material 11 is, thereupon, bonded next to the front surface side of the wafer. When the wafer 1 is heat treated at a suitable temp. in the final, the relief structure and inverted relief structure reinforced by bisection from the bubble region are obtd.
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Inventors:
Michelle Bruhl
Application Number:
JP33364694A
Publication Date:
January 18, 2006
Filing Date:
December 16, 1994
Export Citation:
Assignee:
COMPAGNIE GENERALE DES MATIERES NUCLEAIRES
International Classes:
C30B33/00; G02B5/00; G02B5/18; G02B6/134; H01L21/02; H01L21/265; H01L21/762; H01L27/12; (IPC1-7): C30B33/00; G02B5/00; H01L21/265
Domestic Patent References:
| JP5211128A |
Attorney, Agent or Firm:
Keiichi Yamamoto
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