PRODUCTION OF SINGLE CRYSTAL

Japanese Patent JPH01282194

A

PURPOSE:To prevent bursting phenomena by melting a Si raw material wherein the residual (H) amount of the granular Si raw material obtained by a silane method or the residual (Cl) amount of the granular Si raw material obtained by a trichlorosilane method is specified respectively. CONSTITUTION:A granular Si raw material (A) having <=7.5wt.ppm residual (H) amount in a silane method or having <=15wt.ppm residual (Cl) amount in a trichlorosilane method is obtained. Then the raw material A is introduced into a crucible 3 and heated with a heater 4 to obtain melt (B). Thereafter the crucible 3 is rotated with a shaft 3a in the gaseous Ar atmosphere fed from a protective cylinder 5 and seed crystal 5c is lowered with a pulling-up shaft 5a and immersed in liquid B of the inside of a cylindrical partition 9 and thereafter the additional raw material A is fed to an annular region of the outside of the partition 9 in the crucible 3 via a feed pipe 6a and an introduction jig 10 via the hoppers 6e, 6d while rotating the shaft 5a. Then single crystal 7 is grown under the seed crystal 5c by pulling up the shaft 5a at about 1.5mm/ min velocity.

JP3205646	PRODUCTION OF SM 123 CRYSTAL
JP2012041200	CRYSTAL GROWTH METHOD
JPH05270970	METHOD FOR CRYSTAL GROWTH

KAJIMOTO TSUTOMU
HORIE DAIZO
SAKURADA SHINICHI

JP13514788A

November 14, 1989

May 31, 1988

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OSAKA TITANIUM
KYUSHU ELECTRON METAL

C30B15/02; C30B29/06; (IPC1-7): C30B15/02; C30B29/06

JPS50155423A	1975-12-15
JPS61242984A	1986-10-29
JPS6117537A	1986-01-25
JPS5945917A	1984-03-15
JP40007667A
JPS57183392A	1982-11-11

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