Title:
PRODUCTION OF SINTERED SILICON NITRIDE
Document Type and Number:
Japanese Patent JP2949936
Kind Code:
B2
Abstract:
PURPOSE: To obtain a sintered silicon nitride having high strength at a low cost by sintering the nitride at a temperature lower than the conventional sintering temperature (1700-1800°C).
CONSTITUTION: A sintered silicon nitride is produced by mixing silicon nitride powder having an average particle diameter of ≤0.5μm with 5-15wt.% of Y2O3 and MgAl2O4) in total as a sintering assistant at a Y2O3/MgAl2O4 weight ratio of 0.3-10, forming the mixture and sintering in nitrogen atmosphere at 1400-1650°C (preferably 1500-1550°C).
Inventors:
SAKAMOTO HIDEMITSU
Application Number:
JP19300191A
Publication Date:
September 20, 1999
Filing Date:
August 01, 1991
Export Citation:
Assignee:
TOYOTA JIDOSHA KK
International Classes:
C04B35/584; C04B35/58; (IPC1-7): C04B35/584
Attorney, Agent or Firm:
Aoki Akira (4 outside)