Title:
PURIFICATION OF HIGHLY PURIFIED NONELECTROLYTIC POLYMER AQUEOUS SOLUTION FOR SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH02163130
Kind Code:
A
Abstract:
PURPOSE:To efficiently obtain a highly purified nonelectrolytic polymer aqueous solution by removing metallic ion contained in the nonelectrolytic aqueous solution for forming a polymer film covering the surface of a semiconductor base with an ion exchange resin. CONSTITUTION:Metallic ion contained in an aqueous solution (preferably having 5-10000cps viscosity at 20 deg.C) of a nonelectrolytic polymer (preferably PVA, derivative of said PVA or cellulose derivative) for forming polymer film covering the surface of the semiconductor base in a production process of the semiconductor is removed using an ion exchange resin and preferably, Na, K, Mg, Ca, Cr, Mn, Fe, Co, Ni, Cu and Zn ions are respectively made to <=0.01ppm.
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Inventors:
KAWADA ATSUO
NAGATA AKIHIKO
KUBOTA YOSHIHIRO
NAGATA AKIHIKO
KUBOTA YOSHIHIRO
Application Number:
JP31800888A
Publication Date:
June 22, 1990
Filing Date:
December 16, 1988
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C08J5/18; B01J41/04; B01J47/04; C08L1/08; C08L29/04; H01L21/304; (IPC1-7): B01J41/04; B01J47/04; C08J5/18; C08L1/08; C08L29/04; H01L21/304
Attorney, Agent or Firm:
Yoshio Komiya