Title:
RECTIFICATION ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3430457
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce a forward voltage drop by increasing the area of a Schottky junction for a horizontal element.
SOLUTION: In the rectification element, an insulation film 2 is provided on a single-crystal silicon semiconductor substrate 1, a substrate with an n-type single-crystal silicon semiconductor layer 3 is formed on it, a groove 4 is formed at the n-type single-crystal silicon semiconductor layer 3, an insulation film 5 is provided in the groove 4, a cathode region of a high-concentration n-type region in contact with the side surface of the groove 4 is provided, a cathode electrode 10 that is subjected to ohmic junction to the cathode region 7 is provided, metal 8 with a Schottky barrier on the surface of the n-type single-crystal silicon semiconductor layer 3 at a side that faces the cathode region 7 via the groove 4 and on the insulation film 5 is provided, an anode electrode 11 that is joined to the metal 8 with a Schottky barrier is provided, an insulation film 2 at a part located at the lower portion of the anode electrode 11 is eliminated, and the single-crystal silicon semiconductor substrate 1 and the n-type single-crystal silicon semiconductor layer 3 are electrically connected.
Inventors:
Satoshi Matsumoto
Tatsuro Sakai
Tatsuro Sakai
Application Number:
JP17041499A
Publication Date:
July 28, 2003
Filing Date:
June 17, 1999
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L27/12; H01L23/52; H01L29/47; H01L29/872; (IPC1-7): H01L29/47; H01L27/12; H01L29/872
Attorney, Agent or Firm:
Michio Takayama