SAPPHIRE SINGLE CRYSTAL PRODUCTION APPARATUS

Title:

SAPPHIRE SINGLE CRYSTAL PRODUCTION APPARATUS

Document Type and Number:

Japanese Patent JP2014125384

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a sapphire single crystal production apparatus capable of controlling an accurate crucible temperature by suppressing a discharge phenomenon without lowering heater input power.SOLUTION: In a sapphire single crystal production apparatus including a crucible 1 for storing a sapphire seed crystal and a raw material, and a heater 3 for heating the crucible 1, a barrier 4 having surface roughness reduced gradually from an upper part in the longitudinal direction, and having a distribution of thermal emissivity is installed between the crucible 1 and the heater 3, to thereby form a space having a temperature gradient inside the barrier 4.

More Like This:

JP2014125404	SAPPHIRE SINGLE CRYSTAL GROWTH APPARATUS
JP2005314216	METHOD FOR MANUFACTURING SUBSTRATE WAFER FOR LOW-DEFECT SEMICONDUCTOR COMPONENT, COMPONENT OBTAINED BY THE SAME, AND ITS USE
JP2016193808	PRODUCTION METHOD OF SAPPHIRE SINGLE CRYSTAL

Inventors:

TANAKA YASUHIRO
OKAZAKI SHINYA
FURUKAWA KAZUHIKO
MAKINO HIDEO

Application Number:

JP2012283581A

Publication Date:

July 07, 2014

Filing Date:

December 26, 2012

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SHARP KK

International Classes:

C30B29/20; C30B11/00

Attorney, Agent or Firm:

Patent Business Corporation Ark Patent Office

Previous Patent: HIGH PURITY AMMONIA, PRODUCTION METHOD THEREOF, AND PRODUCTION FACILITY OF HIGH PURITY AMMONIA

Next Patent: HYDROGEN STORAGE/RELEASE METHOD AND HYDROGEN STORAGE/RELEASE APPARATUS