Title:
SELECTIVE ETCHING METHOD FOR ANODICALLY OXIDIZED FILM AND PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE BY USING THIS METHOD
Document Type and Number:
Japanese Patent JPH05323340
Kind Code:
A
Abstract:
PURPOSE:To easily obtain the good selective etching method for anodically oxidized films and the process for production of the liquid crystal display device which exhibits highly reliable functions by utilizing this method. CONSTITUTION:This selective etching method consists in etching the anodically oxidized film consisting of Ta, Ta-Mo alloy, Ta-W alloy or nitride alloys thereof as a base by using an HF-H2SO4, HF-HCl soln. or HF-H2SO4-HCl soln. as an etching soln. at the time of selectively etching the anodically oxidized film mentioned above. Signal wirings for driving and storage capacity lines are constituted of the Ta, Ta-Mo alloy, Ta-W alloy or nitride alloys thereof and the insulating layers of the planes where the signal wirings intersect with each other and come into opposite contact with each other and the plane where picture element electrodes and the storage capacity lines intersect with each other and come into opposite contact with each other are formed by selectively etching the anodically oxidized film of the Ta, Ta-Mo alloy, Ta-W alloy or nitride alloys thereof with the HF-H2SO4, HF-HCl soln. or HF-H2SO4-HCl soln. as the etching soln. in the production of the crystal display device.
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Inventors:
IKEDA MITSUSHI
Application Number:
JP979291A
Publication Date:
December 07, 1993
Filing Date:
January 30, 1991
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C23F1/30; G02F1/13; G02F1/133; G02F1/1343; G02F1/136; G02F1/1368; (IPC1-7): G02F1/1343; C23F1/30; G02F1/13; G02F1/133; G02F1/136
Attorney, Agent or Firm:
Saichi Suyama (1 person outside)