Title:
SEMICONDUCTOR DEVICE AND BURN-IN METHOD THEREOF
Document Type and Number:
Japanese Patent JP2010217132
Kind Code:
A
Abstract:
To provide DC stress capable of obtaining sufficient screening effect in a static burn-in of a semiconductor device.
In the semiconductor device, by setting of an inverting means implementing logical inverting of the standby level of a logical circuit according to input signal, using test mode signal the signal level supplied to a peripheral circuit can be altered between "L" and "H" without change of logic level output from a producing section of the standby signal. Thereby, "H" level can be supplied even to a transistor, input of which is fixed to "L" level during the time of standby.
Inventors:
KAIWA O
Application Number:
JP2009067308A
Publication Date:
September 30, 2010
Filing Date:
March 19, 2009
Export Citation:
Assignee:
ELPIDA MEMORY INC
International Classes:
G01R31/28
Attorney, Agent or Firm:
Kenho Ikeda
Shuichi Fukuda
Takashi Sasaki
Shuichi Fukuda
Takashi Sasaki