To avoid intrusion of hydrogen atom into a dielectric film and deterioration of electric characteristics thereof by specifying the hydrogen concentration in the dielectric film thereby forming an interlayer insulation film after formation of a dielectric capacitor.

Hydrogen concentration in a PZT film constituting a ferroelectric capacitor must be about 1.5×1020 cm-3 or below in order for the PZT film to have minimum generally requested electric characteristics, i.e., QSW of about 5 μC/cm2 or above. More specifically, hydrogen concentration in a PZT film is set at 7×1019 cm-3 or below. In order to control the hydrogen concentration in a PZT film, a ferroelectric capacitor is covered with a CVD interlayer insulation film, a contact hole is made to expose the electrode of the capacitor and the PZT film is heat treated in oxidizing atmosphere before an electrode is formed in the contact hole.