Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP7226578
Kind Code:
B2
Abstract:
A semiconductor device includes: a wiring layer; a titanium nitride layer deposited on the wiring layer; a titanium oxynitride layer deposited on the titanium nitride layer; a titanium oxide layer deposited on the titanium oxynitride layer; and a surface passivation film deposited on the titanium oxide layer, wherein an opening penetrating the titanium nitride layer, the titanium oxynitride layer, the titanium oxide layer, and the surface passivation film is provided to expose a part of the wiring layer so as to serve as a pad.
Inventors:
Masaharu Yamaji
Taichi Kano
Hitoshi Sumita
Hideaki Ito
Taichi Kano
Hitoshi Sumita
Hideaki Ito
Application Number:
JP2021552263A
Publication Date:
February 21, 2023
Filing Date:
August 27, 2020
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/3205; H01L21/60; H01L21/768; H01L23/522; H01L23/532
Domestic Patent References:
| JP2019106485A | ||||
| JP2010272621A | ||||
| JP4212459A |
Attorney, Agent or Firm:
Hirose Hajime