Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3654307
Kind Code:
B2
Abstract:
PURPOSE: To enable the formation of a GaN compound semiconductor layer on a SiC substrate by depositing a GaAlInN layer on the top of the substrate while gradually increasing the temperature of the SiC substrate from a first value to a specified second value, and keeping the substrate at the second temperature and further depositing another GaAlInN layer thereon.
CONSTITUTION: A high-frequency coil 3 is wound around the circumference of a processing chamber 1 in such a way that a substrate holder 2 is surrounded therewith. A high-frequency current is passed through the high-frequency coil 3 to heat the substrate holder 2, and a substrate 7 is heated by heat conducted by the substrate holder 2. While the temperature of a SiC substrate 7 is gradually increased from a first value to a second value, 300°C or more higher tan the first value, a Ga1-x-yAlxInyN layer (0≤x≤0.2, 0≤y≤0.3) is deposited on the top of the SiC substrate 7. Then, while the SiC substrate 7 is kept at the second temperature, a Ga1-i-jAliInjN layer (0≤i≤0.2, 0≤j≤0.3) is deposited on the Ga1-x-yAlxInyN layer.
Inventors:
Kazuhiko Horino
Application Number:
JP6101595A
Publication Date:
June 02, 2005
Filing Date:
March 20, 1995
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L29/20; H01L21/205; (IPC1-7): H01L21/205
Domestic Patent References:
| JP6244122A | ||||
| JP4242985A | ||||
| JP6177046A | ||||
| JP5291618A | ||||
| JP5343737A | ||||
| JP5206513A | ||||
| JP5041541A | ||||
| JP8203834A | ||||
| JP8116092A |
Attorney, Agent or Firm:
Keishiro Takahashi
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