To provide a structure with which the lowering of adhesive strength can be prevented even when an electrode pad is brought into a microscopic state and the generation of passivation cracks can be prevented in the wire bonding process when a semiconductor is manufactured, and to provide the manufacturing method of the above-mentioned semiconductor device.

The electrode pads 2, on an IC chip 1, are formed in rectangular shape, and oval balls 3 are bonded thereon. The oval balls 3 are press-bonded on the rectangular electrode pads 2. Also, the electrode pads 2 are arranged in zigzags on the side in the direction horizontal to ultrasonic waves, they are arranged in a line on the vertical side, and the balls 3 of the same shape can be formed. As a result, the contact of the adjacent pads and the press- bonded balls can be prevented, and also adhesive strength can be maintained equal to the conventional one.