Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2014236151
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To stabilize characteristics of a device including a thin film transistor.SOLUTION: A semiconductor device 100 comprises: a substrate 301; a thin film transistor 12 which is supported by the substrate 301 and includes a semiconductor layer 305; and an insulating protection layer 30 arranged so as to overlap at least a part of the semiconductor layer 305 when viewed from a normal direction of the substrate 301. The insulating protection layer 30 consists primarily of polyparaxylylene and contains at least one metal element selected from a group consisting of palladium, tantalum and vanadium, and at least one element selected from a group consisting of gallium, gold, argon, cesium, sodium and magnesium.
Inventors:
YAMANAKA MIKIHIRO
NAKAMURA MAKOTO
YAMAUCHI TAKAYUKI
AZUMA SHINICHIRO
NAKAMURA MAKOTO
YAMAUCHI TAKAYUKI
AZUMA SHINICHIRO
Application Number:
JP2013118001A
Publication Date:
December 15, 2014
Filing Date:
June 04, 2013
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L29/786; G01T7/00; H01L27/144; H01L27/146
Attorney, Agent or Firm:
Seiji Okuda
Shuichi Kita
Ryoji Yamashita
Akiko Miyake
Hisashi Tanaka
Shuichi Kita
Ryoji Yamashita
Akiko Miyake
Hisashi Tanaka