To improve connection reliability at a large extent, without increasing manufacturing man-hours and to prevent short-circuiting between neighboring bumps at the time of mounting.
After a bump 8 has been formed on an electrode 4 of a carrier substrate 2, this device is subjected to die bonding and wire bonding, and sealing by resin 9 is conducted. Thus, the contact failure due to contamination on the electrode 4 and the like are prevented. Furthermore, when a semiconductor device 1 is mounted, thermosetting conductive bonding material 20 such as epoxy resin base is applied to the bump 8. A semiconductor device 1 is mounted on a printed wiring board 19, so that the bump is in correspondence with a respective land 19a. The conductive bonding material 20 is hardened through heating at a temperature of 150-180°C, and the lands 19a and the bump 8 are surely connected. A projection 8a of the bump 8 is able to enlarge the contact area of the bump 8 and the conductive bonding material 20, and to prevent expansion of the conductive bonding material in the lateral direction.
FUNAKI TSUKIO
HITACHI HOKKAI SEMICONDUCTOR