Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2010238752
Kind Code:
A
Abstract:
To provide a semiconductor device which can reduce a leakage current unnecessary for the operation of the semiconductor device, and to provide a method of manufacturing the semiconductor device.
An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer.
Inventors:
OISHI TOSHIYUKI
YAMAMOTO YOSHITSUGU
OTSUKA HIROSHI
YAMANAKA KOJI
INOUE AKIRA
YAMAMOTO YOSHITSUGU
OTSUKA HIROSHI
YAMANAKA KOJI
INOUE AKIRA
Application Number:
JP2009082480A
Publication Date:
October 21, 2010
Filing Date:
March 30, 2009
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2002057158A | 2002-02-22 | |||
| JP2008288474A | 2008-11-27 | |||
| JP2008010803A | 2008-01-17 | |||
| JP2008171843A | 2008-07-24 | |||
| JP2008112868A | 2008-05-15 | |||
| JP2008205146A | 2008-09-04 | |||
| JPH0485946A | 1992-03-18 | |||
| JP2005086102A | 2005-03-31 | |||
| JP2007088426A | 2007-04-05 | |||
| JP2008270847A | 2008-11-06 |
Foreign References:
| WO2009001888A1 | 2008-12-31 | |||
| WO2009001888A1 | 2008-12-31 |
Attorney, Agent or Firm:
Hideaki Tazawa
Hamada Hatsune
Hamada Hatsune
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