To install a high withstand-voltage element with stable withstand-voltage characteristics and stable operating characteristics without effect on low withstand-voltage transistor characteristics.
In a semiconductor device 1 in which a high withstand-voltage element 20a and a low withstand-voltage element 20b that are element-isolated by a trench isolation insulating film (a plasma oxide film 6) are provided on an identical semiconductor substrate 2, a surface height of the trench isolation insulating film (the plasma oxide film 6) in a high withstand-voltage element formation region is formed lower than a surface height of the trench isolation insulating film (the plasma oxide film 6) in a low withstand-voltage element formation region. The surface height of the trench isolation insulating film (the plasma oxide film 6) in the high withstand-voltage element formation region is formed so as to be only -10 to 60 nm (more preferably -10 to 30 nm) higher than a surface of the semiconductor substrate 2 forming a channel of the high withstand-voltage element 20a.
| JP7475130 | image sensor |
| JPS63142853 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
NISHIKATA MINORU
Takaaki Yasumura
Takeshi Oshio
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