Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP3420743
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a gate electrode constituted of a laminated film of a titanium nitride film in a lower layer and tungsten film in an upper layer, without lowering the reliability of a gate insulation film.
SOLUTION: After forming a silicon nitride oxide film 12 which will become the gate insulation film on a semiconductor substrate 10, the titanium nitride film 13 is formed on the silicon nitride oxide film 12 by the CVD method, and thereafter the tungsten film 14 is formed on the titanium nitride film 13 by a sputtering method, The laminated film of the tungsten film 14 and titanium nitride film 13, and the silicon nitride oxide film 12 are patterned to form the gate electrode 15 and gate insulation film 16.
Inventors:
Masaru Moriwaki
Ryujun Yamada
Kazuhiko Yamamoto
Ryujun Yamada
Kazuhiko Yamamoto
Application Number:
JP2000301673A
Publication Date:
June 30, 2003
Filing Date:
October 02, 2000
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/285; H01L21/28; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L29/423; H01L29/43; H01L29/49; H01L29/78; (IPC1-7): H01L21/285; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L29/43; H01L29/78
Domestic Patent References:
| JP2001203276A | ||||
| JP2000349285A |
Attorney, Agent or Firm:
Hiroshi Maeda (7 outside)