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Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012253230
Kind Code:
A
Abstract:

To provide a semiconductor device that operates stably.

A semiconductor device comprises: a well 13 of a first conductivity type that is formed in a substrate 11; a gate electrode 18 that is disposed above the well 13 via a gate insulating film 17; a source region 15 and a drain region 16 of a second conductivity type that are disposed facing each other in the substrate 11 with interposed the gate electrode 18 therebetween; a well tap 19 that is disposed adjacent to the source region 15 in the substrate 11 and is electrically connected to the well 13; and a pocket region 20 that contacts the well 13 and the well tap 19, has a higher impurity concentration than the well 13, and has the first conductivity type.


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Inventors:
MAEKAWA HIROTAKA
YASUDA MAKOTO
Application Number:
JP2011125385A
Publication Date:
December 20, 2012
Filing Date:
June 03, 2011
Export Citation:
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Assignee:
FUJITSU SEMICONDUCTOR LTD
International Classes:
H01L21/336; H01L29/78
Domestic Patent References:
JPH09219512A1997-08-19
JPH06310717A1994-11-04
JPS5654071A1981-05-13
JP2001094094A2001-04-06
JP2012004471A2012-01-05
Foreign References:
US20010012671A12001-08-09
US20110309439A12011-12-22
US20080246086A12008-10-09
US5831320A1998-11-03
GB2277406A1994-10-26
US6063674A2000-05-16
Attorney, Agent or Firm:
Atsushi Aoki
Koichi Itsubo
Higuchi Souji
Ryu Kobayashi



 
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