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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND SUSTAIN CIRCUIT
Document Type and Number:
Japanese Patent JP3776103
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a switching element which can be applied to a sustain circuit of a plasma display panel, attains area reduction, while suppressing power loss, and can be driven by an alternating current.
SOLUTION: A first switching element 1 of a longitudinal MOSFET including wide-band gap semiconductor wafers 11, 21 each being composed of a silicon carbide, source electrodes 15, 25 and gate electrodes 17, 27 provided on the principal surface side of each wafer and drain electrodes 18, 28 provided on the rear surface of each wafer, and a second switching element 2 of the identical structure are constituted, by mutually overlapping their principal surface sides.


Inventors:
Makoto Kitabatake
Kazuhiko Asada
Hidekazu Yamashita
Nobuyoshi Nagata
Noboru Kazuhiro
Hideki Omori
Masanori Ogawa
Application Number:
JP2003402091A
Publication Date:
May 17, 2006
Filing Date:
December 01, 2003
Export Citation:
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Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/28; H01L27/04; G09G3/20; G09G3/291; G09G3/294; G09G3/296; H01L21/336; H01L25/065; H01L25/07; H01L25/18; H01L29/12; H01L29/417; H01L29/423; H01L29/49; H01L29/78; (IPC1-7): H01L29/78; G09G3/20; G09G3/28; H01L21/28; H01L21/336; H01L25/065; H01L25/07; H01L25/18; H01L29/417; H01L29/423; H01L29/49
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada