Title:
SEMICONDUCTOR DEVICE WITH BUILT-IN PASSIVE ELEMENT
Document Type and Number:
Japanese Patent JP2004047811
Kind Code:
A
Abstract:
To provide a semiconductor device with built-in passive elements in which the passive elements are juxtaposed to one another in a semiconductor element, inner leads with narrow pitches are provided and a low profile formation is realized.
A semiconductor element 1 is mounted on a stage 4 of a lead frame 2. An insulating tape 7 is adhered to a surface of the semiconductor element 1, and the passive elements 8, 9 are mounted thereon. The semiconductor element 1 and the inner leads, and electrodes of the passive elements and the inner leads are electrically connected by metallic wires 5, respectively. The lead frame 2, the semiconductor element 1 and the passive elements 8, 9 are sealed by means of a sealing resin.
Inventors:
IKEMOTO YOSHIHIKO
KIKUCHI ATSUSHI
YONEDA YOSHIYUKI
KIMURA YOSHIJI
KIKUCHI ATSUSHI
YONEDA YOSHIYUKI
KIMURA YOSHIJI
Application Number:
JP2002204560A
Publication Date:
February 12, 2004
Filing Date:
July 12, 2002
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L25/00; H01L23/50; (IPC1-7): H01L23/50; H01L25/00
Attorney, Agent or Firm:
Tadahiko Ito
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