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Title:
SEMICONDUCTOR DEVICE WITH SOLID-STATE IMAGE SENSING ELEMENT AND MANUFACTURE OF THIS SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3877860
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor device with a CCD, which has the area made narrower than that of a conventional semiconductor device with a CCD, and a method of manufacturing the semiconductor device.
SOLUTION: A semiconductor device is provided with a multilayer board 110, a semiconductor chip 111 for peripheral circuit and a CCD solid-state image sensing element 112. The board 110 has second and first pad electrodes 124 and 125, on which the chip 111 is flip-chip mounted, on the side surface on one side of the side surfaces opposing to each other of the board 110 and has third pad electrodes 126 on the other side surface. As the element 112 is arranged on the chip 111 flip-chip mounted on the board 110, the extension, which is extended in the direction intersecting orthogonally the thickness direction of the board 110, of the semiconductor device can be reduced and the area of the whole semiconductor device can be reduced.


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Inventors:
Nishida alone
Toshiaki Sugimura
Application Number:
JP6004298A
Publication Date:
February 07, 2007
Filing Date:
March 11, 1998
Export Citation:
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Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/60; H01L27/14; H01L23/02; H01L23/28; (IPC1-7): H01L27/14; H01L21/60; H01L21/60; H01L23/02; H01L23/28
Domestic Patent References:
JP9260441A
JP45017108B1
JP5268535A
JP7038072A
JP3155671A
JP9232551A
JP6029503A
Attorney, Agent or Firm:
Aoyama Aoi
Mitsuo Wada