Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2008066708
Kind Code:
A
Abstract:
To provide a semiconductor device which reduces the channel resistance of a MOSFET to reduce the on-resistance of an element.
The semiconductor device includes a first conductive drain layer 11, an epitaxial layer 12 formed on the drain layer 11, and a second conductive base layer 13 formed on the surface of the epitaxial layer 12. A plurality of gate electrodes 15 are formed via gate insulating layers 14 so that the base layer 13 is located between the gate electrodes 15. The width x of the base layer 13 located between the gate electrodes 15 is designated to be 0.3 m or smaller.
Inventors:
KAWAGUCHI YUSUKE
YAMAGUCHI YOSHIHIRO
ONO SHOTARO
NAKAGAWA AKIO
AKIYAMA MIWAKO
NAKAYAMA KAZUYA
YAMAGUCHI SHOICHI
YAMAGUCHI YOSHIHIRO
ONO SHOTARO
NAKAGAWA AKIO
AKIYAMA MIWAKO
NAKAYAMA KAZUYA
YAMAGUCHI SHOICHI
Application Number:
JP2007165879A
Publication Date:
March 21, 2008
Filing Date:
June 25, 2007
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L29/78; H01L21/336
Domestic Patent References:
| JP2003017696A | 2003-01-17 | |||
| JP2001501372A | 2001-01-30 | |||
| JP2005268679A | 2005-09-29 | |||
| JP2006196876A | 2006-07-27 |
Attorney, Agent or Firm:
Masaru Itami
Kazuhiko Tamura
Kazuhiko Tamura