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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2014160535
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device with an improved integration degree.SOLUTION: A semiconductor device includes: a first memory cell that includes a first transistor, a second transistor, and a first capacitance; and a second memory cell that includes a third transistor, a fourth transistor, and a second capacitance. One of source or drain of the first to fourth transistors is electrically connected to a bit line. A contact between the bit line and the plurality of memory cells is shared so that an integration degree is improved.

Inventors:
TAKEMURA YASUHIKO
Application Number:
JP2014081618A
Publication Date:
September 04, 2014
Filing Date:
April 11, 2014
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
G11C11/405; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
JP2006012878A2006-01-12
JP2007250044A2007-09-27
JPH06125084A1994-05-06
JP2010003910A2010-01-07
JP2009135350A2009-06-18
JP2009224479A2009-10-01
JP2009260002A2009-11-05
JPH10209389A1998-08-07
JP2002368226A2002-12-20
JP2001203277A2001-07-27
JP5467036B22014-04-09
JP5604290B22014-10-08
JP5604291B22014-10-08
JP5544326B22014-07-09
JPS60130160A1985-07-11
JPS62274773A1987-11-28
JP5604560B22014-10-08
JP2011238334A2011-11-24
JP2012252766A2012-12-20
Foreign References:
US20060164876A12006-07-27
WO2005088726A12005-09-22



 
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