Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015142103
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a propagation amount of electromagnetic waves used in a superhigh frequency band in the device is sufficiently attenuated.SOLUTION: A semiconductor device 1 comprises: a semiconductor substrate 2 having a principal surface 2a and a rear face 2b; a device region 3 provided on the principal surface 2a; a first terminal 4 which is provided on the principal surface 2a on one lateral face 2c side and connected to the device region 3; a second terminal 5 which is provided on the principal surface 2a on the side of a lateral face 2d opposite to the one lateral face 2c and connected to the device region; and a first conductive film 6 and a second conductive film 7 which are provided on the rear face 2b. The first conductive film 6 is arranged closer to the one lateral face 2c than to the lateral face 2d. The second conductive film 7 is arranged between the first conductive film 6 and the lateral face 2d. The first conductive film 6 and the second conductive film 7 are electrically isolated from each other.
Inventors:
TSUKASHIMA KOJI
Application Number:
JP2014015720A
Publication Date:
August 03, 2015
Filing Date:
January 30, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L23/14; H01L23/00; H01L23/12; H01Q17/00
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
High Kunio Ki
Shotaro Terasawa
Yoshiki Kuroki
High Kunio Ki
Shotaro Terasawa