Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2016126806
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device configured so as to replace defective memory cells with redundant memory cells to relieve the defective memory cells, in which the number of fuse sets usable in a later process is increased to improve the yield of the semiconductor device.SOLUTION: The semiconductor device includes a plurality of fuse sets for holding the address of a memory cell that is found defective, and a selection circuit for selecting a fuse set used to relieve the memory cell in a later process from among the plurality of fuse sets. Each of the plurality of fuse sets comprises a plurality of fuses including a first fuse that holds a first flag indicating whether the fuse set has been used or not. The selection circuit also refers to the address of a memory cell that is found defective and the first flag, and selects a fuse set used to relieve the memory cell in a later process in accordance with the order of priority assigned to the plurality of fuse sets.SELECTED DRAWING: Figure 1
Inventors:
TAKAHASHI SUSUMU
Application Number:
JP2014265908A
Publication Date:
July 11, 2016
Filing Date:
December 26, 2014
Export Citation:
Assignee:
MICRON TECHNOLOGY INC
International Classes:
G11C29/00; G11C11/401
Attorney, Agent or Firm:
Kato Asamichi
Kiuchi Uchida
Mitsuru Aoki
Kiuchi Uchida
Mitsuru Aoki