Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021034720
Kind Code:
A
Abstract:
To provide a semiconductor device in which reliability is improved.SOLUTION: A semiconductor device according to an embodiment of the present invention, includes: a circumference circuit region provided on a first substrate, and including a circuit element; a memory cell region containing a gate electrode provided on a second substrate arranged on a top part of the first substrate and laminated so as to be separated along a first direction each other, and a channel structure including a channel layer; and a penetration wiring region. The penetration wiring region contains: a penetration contact plug penetrating the memory cell region to electrically couple the memory cell region and the circuit element; an insulation region that surrounds the penetration contact plug, and includes a first insulation layer arranged side by side with the second substrate, and second and third insulation layers alternately laminated on the first insulation layer; and dummy channel structures that penetrate the second and third insulation layers, contain the channel layer, are arranged so as to form a row and column so that at least one of them is positioned between the adjacent penetration contact plugs.SELECTED DRAWING: Figure 5b
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Inventors:
PARK JOOWON
LEE WOONGSEOP
JUNG EIWHAN
CHEON JI-SUNG
LEE WOONGSEOP
JUNG EIWHAN
CHEON JI-SUNG
Application Number:
JP2020112564A
Publication Date:
March 01, 2021
Filing Date:
June 30, 2020
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L27/11582; H01L21/336; H01L21/768; H01L27/11556; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Osamu Miyazaki
Tadahiko Ito
Osamu Miyazaki