Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022161688
Kind Code:
A
Abstract:
To solve such a problem that, in a transistor portion provided with a lifetime control region, a threshold voltage may decrease due to generation of an interface state at a portion where a channel is formed.SOLUTION: There is provided a semiconductor device in which a lifetime control region including a lifetime killer is provided, below a base region, from at least a part of a transistor portion to a diode portion. The transistor portion includes: a main region spaced apart from the diode portion in a top view of a semiconductor substrate; a boundary region located between the main region and the diode portion and overlapping the lifetime control region, in a top view of a semiconductor substrate; and a plurality of gate trench portions provided from the top surface of the semiconductor substrate to a drift region through the base region. The plurality of gate trench portions includes a first gate trench portion provided in the main region, and a second gate trench portion provided in the boundary region, signal transmission timing of the first gate trench portion being different from signal transmission timing of the second gate trench portion.SELECTED DRAWING: Figure 3
Inventors:
KUBOUCHI MOTOYOSHI
Application Number:
JP2021066695A
Publication Date:
October 21, 2022
Filing Date:
April 09, 2021
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L29/78; H01L21/336; H01L21/822; H01L21/8234; H01L27/088; H01L29/12; H01L29/739; H01L29/861
Attorney, Agent or Firm:
Patent Attorney Corporation RYUKA International Patent Office