SEMICONDUCTOR DEVICE

Japanese Patent JP3289748

B2

PURPOSE: To obtain synapse coupling by the use of fewer elements by providing a means for setting the potential of a first electrode to a specified value to be determined by the potential of a floating gate, and a means for transferring charge between the floating gate and the first electrode applying a specified voltage pulse to a second electrode.
CONSTITUTION: The gates of a PMOS 103 and an NMOS 104 are connected to a signal line Vi, and the gate of an NMOS 105 is to a signal line Vs. A programming pulse applying electrode Vp is used as an input gate for determining the potential of a floating gate 101. VE is a programming pulse applying electrode also, and forms SiO2, between the floating gate 101 and a write electrode 107. And when the potential difference between the both becomes sufficiently large, current flows by Fowler Nord Heim tunneling phenomenon. If the quantity QF of the charge in the floating gate 101 changes and becomes maximum or minimum, updating is not made any further, and it becomes possible to obtain synapse coupling.

Hideo Kosaka
Naoshi Shibata
Takeo Yamashita
Tadahiro Ohmi

JP30067093A

June 10, 2002

November 30, 1993

Click for automatic bibliography generation  

Naoshi Shibata
Tadahiro Ohmi
UCT Co., Ltd.
I&F Co., Ltd.

G06G7/60; G06N3/063; G11C27/00; H01L21/8247; H01L27/10; H01L27/115; H01L29/423; H01L29/788; H01L29/792; (IPC1-7): H01L27/10; G06G7/60; H01L21/8247; H01L27/115; H01L29/788; H01L29/792

JP59175770A
JP6125049A
JP4333184A
JP620076A
JP3144785A

Hisao Fukumori

Previous Patent: BLISTER PACKAGE

Next Patent: LOGICAL LINK NUMBER ATTACHING TYPE PERSONAL COMMUNICATION METHOD