Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6203097
Kind Code:
B2
Abstract:
A semiconductor device according to the embodiments includes: a first normally-off transistor including a first source terminal, a first drain terminal, and a first gate terminal; a normally-on transistor including a second source terminal connected to the first drain terminal, a second drain terminal, and a second gate terminal connected to the first source terminal; a protection element provided between the first gate terminal and the second drain terminal, and having breakdown voltage lower than breakdown voltage of the normally-on transistor; and a first diode including a first anode connected to the second drain terminal and a first cathode connected to the protection element.
Inventors:
Kentaro Ikeda
Hiroshi Mochikawa
Atsushi Kuzumaki
Hiroshi Mochikawa
Atsushi Kuzumaki
Application Number:
JP2014059199A
Publication Date:
September 27, 2017
Filing Date:
March 20, 2014
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/822; H01L21/337; H01L21/338; H01L27/04; H01L29/778; H01L29/808; H01L29/812; H03K17/08; H03K17/16; H03K17/695
Domestic Patent References:
| JP2011512119A | ||||
| JP2011139290A | ||||
| JP2012064672A | ||||
| JP2000077537A | ||||
| JP3038881A | ||||
| JP2002231820A | ||||
| JP8064812A | ||||
| JP8204125A | ||||
| JP2013219306A | ||||
| JP2012199549A | ||||
| JP2014229755A |
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama
Akira Sudo
Mitsuyuki Matsuyama