PURPOSE: To obtain a fast, low-noise semiconductor device low in power consumption by operating the majority of circuits in a chip with a low amplitude and driving an MOS memory cell with a signal which is converted by a level converting circuit to a high amplitude.
CONSTITUTION: The input circuit and output circuit of the input circuit of an ECL/TTL interface are composed of bipolar or BiCOMS circuits and operated with a source voltage (VCC, VEE) which is applied from outside. An internal logic circuit or memory is composed of a CMOS circuit and operated with an internal source voltage VC1 or VE1, so this internal circuit receives an input signal of 0.8-1.6V from the input circuit to operate fast with the low amplitude. Voltage converting circuits L1 and L2 generate the voltage VC1 and VE1 which are lower than the VCC and higher than the VEE by using MOS or bipolar transistors. Thus, the majority of CMOS circuits of the chip is operated with the low voltage, so the fast, low in power consumption and low-noise semiconductor device is obtained.
KITSUKAWA GORO
KAWAJIRI YOSHIKI
ITO KIYOO
| JPS63302622A | 1988-12-09 |