Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2022082914
Kind Code:
A
Abstract:
To prevent the degradation of semiconductor device reliability caused by the birds' beak formed between a memory gate electrode and an ONO film due to oxidation in a split-gate type MONOS memory.SOLUTION: In a memory cell MC where a control gate electrode CG and a memory gate electrode MG are adjacent through an ONO film CF, no high-k film is formed between the control gate electrode CG and the memory gate electrode MG, and an insulating film HK that is a high-k film, is formed between the bottom surface of the memory gate electrode MG and the ONO film CF.SELECTED DRAWING: Figure 2
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Inventors:
MAEKAWA KEIICHI
Application Number:
JP2020194087A
Publication Date:
June 03, 2022
Filing Date:
November 24, 2020
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/336; H01L27/1157
Attorney, Agent or Firm:
Tsutsui International Patent Office
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