Title:
半導体素子およびその製造方法
Document Type and Number:
Japanese Patent JP5285835
Kind Code:
B2
Abstract:
Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.
Inventors:
Koichi Tachibana
Saito Shinji
Shinya Nunoue
Saito Shinji
Shinya Nunoue
Application Number:
JP2005204436A
Publication Date:
September 11, 2013
Filing Date:
July 13, 2005
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01S5/343; H01L21/318; H01L33/06; H01L33/32
Domestic Patent References:
| JP2002237660A | ||||
| JP3142892A | ||||
| JP200323180A | ||||
| JP2004266057A | ||||
| JP200226442A | ||||
| JP58125832A | ||||
| JP964453A | ||||
| JP2004186679A | ||||
| JP6268327A | ||||
| JP9194204A | ||||
| JP63162558U | ||||
| JP1289289U | ||||
| JP2002198563A | ||||
| JP2002237648A | ||||
| JP2250380A |
Attorney, Agent or Firm:
Hirohito Katsunuma
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
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