Title:
半導体装置および電力変換装置
Document Type and Number:
Japanese Patent JP7146113
Kind Code:
B2
Abstract:
The purpose of the present invention is to provide a semiconductor device in which increase of electric current amount by biased flow-back current to body diodes of some of switching elements is suppressed and increase of on-resistance of the switching elements due to electric conduction degradation is suppressed. In an upper arm (100a) of a semiconductor device (100), inductance of a conductive path from a first DC terminal (103) to a flyback diode (102a) is less than inductance of a conductive path from the first DC terminal (103) to a plurality of switching elements (101b). Further, a lower arm (100b) of the semiconductor device (100) has a feature in that inductance of a conductive path from a projection part (113) of a second DC terminal (104) to a flyback diode (102b) is less than inductance of a conductive path from a projection part (113) to a plurality of switching elements (101b).
Inventors:
Takao Mitsui
Shinya Yano
Kimura Taro
Shinya Yano
Kimura Taro
Application Number:
JP2021555908A
Publication Date:
October 03, 2022
Filing Date:
August 26, 2020
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/78; H01L21/60; H01L21/822; H01L21/8234; H01L25/07; H01L25/18; H01L27/04; H01L27/06; H01L29/12
Domestic Patent References:
| JP2015106601A | ||||
| JP2018060928A | ||||
| JP2014128066A | ||||
| JP2011036016A | ||||
| JP2017017812A |
Foreign References:
| WO2018084020A1 |
Attorney, Agent or Firm:
Patent Attorney Fukami Patent Office