Title:
SEMICONDUCTOR FLOW VELOCITY SENSOR
Document Type and Number:
Japanese Patent JPH01301121
Kind Code:
A
Abstract:
PURPOSE:To reduce the loss of heat conduction to a heat generating element and to improve the response by providing a temperature detecting element, the heat generating element, and a protection film. CONSTITUTION:An etching stopper layer 12 is formed of an insulating layer on a semiconductor substrate 11 and a temperature detecting element 14 and the heat generating element 15 are provided on the stopper layer 1. Further, a protection film 18 is provided on the temperature detecting element 14, heat generating element 15, and stopper layer 12. Further, a semiconductor substrate 11 is etched from its reverse side within a range corresponding to the heat generating element part 15 to form a recessed part 20 reaching the stopper layer 12, and slits 19 are formed in the protection film 18 and insulating layer on both sides of the heat generating element 15 to link the recessed part 20. Then, the semiconductor 11 is removed by the recessed part 20 at the heat generating element part 15 and on the thin stopper layer 12, and the slits 19 are formed on both sides. Accordingly, lateral heat resistance is large, the heat capacity of the heat generating element 15 may be small, and the loss of heat conduction to the temperature detecting element 14 decreases, thereby improving the response to variation in flow velocity.
Inventors:
TANIMOTO KOJI
BESSHO MIKIO
BESSHO MIKIO
Application Number:
JP13308088A
Publication Date:
December 05, 1989
Filing Date:
May 30, 1988
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01F1/68; G01F1/692; G01P5/12; (IPC1-7): G01F1/68
Attorney, Agent or Firm:
Kaneo Miyata (3 outside)
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