Title:
SEMICONDUCTOR FLOW VELOCITY SENSOR
Document Type and Number:
Japanese Patent JPH01301120
Kind Code:
A
Abstract:
PURPOSE:To improve flow velocity detection accuracy and to improve the response to flow velocity variation by providing a temperature detecting element, a heat generating element, and a recessed part. CONSTITUTION:An etching stopper layer 12 is formed of insulating layers 15 and 16 on a semiconductor substrate 11, a semiconductor layer 13 is formed thereupon, and temperature detecting elements 17 and 18 and a heat generating element 19 are formed on the semiconductor layer 13. Further, the semiconductor substrate 11 is etched at its center part from its reverse side to form the recessed part reaching a stopper layer 12. Thus, the etching depth can be made accurate by the stopper layer 12 and a high-accuracy thin part is formed without requiring a margin to the thickness of the semiconductor layer 13 at the upper part. Then lateral heat resistance from the heat generating element 19 is made large and even when the temperature of the heat generating element 19 is raised, the influence upon fluid temperature detecting elements 17 and 18 is reduced and the heat capacity of the heat generating element 19 may be small, thereby improving the response to the flow velocity variation.
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| JPH0274825 | INTAKE AIR FLOW DETECTOR |
| JPH05164584 | MICROFLOW SENSOR |
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Inventors:
TANIMOTO KOJI
BESSHO MIKIO
BESSHO MIKIO
Application Number:
JP13307988A
Publication Date:
December 05, 1989
Filing Date:
May 30, 1988
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01F1/68; G01F1/692; (IPC1-7): G01F1/68
Domestic Patent References:
| JPS601525A | 1985-01-07 | |||
| JPS6243522A | 1987-02-25 |
Attorney, Agent or Firm:
Kaneo Miyata (3 outside)